| Authors: | D. Wang, T. Reep, T. N. L Tran, S. Poelman, J. Zhang, J. Carreira, C. Op de Beeck, S. Cuyvers, M. Geiselmann, M. Billet, D. Van Thourhout, G. Roelkens, B. Kuyken | | Title: | Heterogeneous Integration of Multi-Band Mode-Locked and Single-Mode Lasers on an Extended Commercial SiN Platform | | Format: | International Journal | | Publication date: | 10/2026 | | Journal/Conference/Book: | Lasers & Photonics Reviews
| | DOI: | 10.1002/lpor.71990 | | Citations: | Look up on Google Scholar
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Abstract
Integrated silicon nitride (SiN) waveguides offer ultra-low propagation loss across a broad transparency window, enabling largescale photonic integrated circuits (PICs) for applications from LiDAR to quantum photonics. However, integrating lasers on SiN PICs remains challenging due to the large refractive-index contrast between SiN and high-index IIIV gain materials. We address this by extending Ligentec commercial bi-layer SiN platform with a polycrystalline silicon (Poly-Si) layer and demonstrate heterogeneous integration of GaAs- and InP-based amplifiers via a scalable process called micro-transfer printing. Multi-section adiabatic tapers ensure efficient coupling from the SiN to Poly-Si layer and onward to the printed IIIV devices. In a single fabrication run, we realize a diverse set of lasers, including the first O-band GaAs-on-SiN mode-locked laser (5.1 GHz repetition rate, 5.4 ps pulse width), a C-band mode-locked laser delivering >1 mW optical power per output, and multiple singlemode sources (ring-filter and distributed Bragg reflector cavities) with side-mode suppression ratio up to 51 dB and intrinsic linewidth down to 1 kHz. These results demonstrate how combining micro-transfer printing with an extended SiN platform enables versatile, multi-wavelength laser integration, establishing a practical route to complex light sources for advanced photonic systems. Related Research Topics
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