Authors:	M. Niels, T. Vanackere, E. Vissers, T. Zhai, P. Nenezic, J. Declerq, C. Bruynsteen, S. Niu, A. Moerman, O. Caytan, N. Singh, S. Lemey, X. Yin, S. Janssen, P. Verheyen, N. Singh, D. Bode, M. Davi, F. Ferraro, P. Absil, S. Balakrishnan, J. Van Campenhout, G. Roelkens, B. Kuyken, M. Billet
Title:	Wafer-scale integration of lithium niobate on a silicon photonics 200-mm platform
Format:	International Conference Proceedings
Publication date:	Accepted for publication. Not yet published
Journal/Conference/Book:	IEEE Photonics Conference
Location:	Singapore, Singapore
Citations:	Look up on Google Scholar
Download:	(582KB)

Abstract

We demonstrate a scalable approach for integrating lithium niobate onto silicon photonics using wafer-scale micro-transfer printing, enabling high-speed modulators with a 3.8 V half-wave voltage and over 70 GHz bandwidth. As proof of concept, over 200 lithium niobate structures were integrated on a 200-mm wafer.

Related Research Topics

• photonic-electronic integrated circuits for optical transceivers
• Siliconnitride photonic integrated circuit platform
• Chi(2) nonlinear optics in silicon-based waveguide circuits
• Transfer printing technology

Related Projects

• Horizon Europe: PATTERN (Next generation ultra-high-speed microwave Photonic integrATed circuiTs using advancE hybRid iNtegration)