| Authors: | Z. Wang, B. Tian, M. Pantouvaki, Weiming Guo, Philippe Absil, J Van Campenhout, Clement Merckling, D. Van Thourhout | | Title: | Room Temperature InP Distributed Feedback Laser Array Directly Grown on (001) Silicon | | Format: | International Journal | | Publication date: | 10/2015 | | Journal/Conference/Book: | Nature Photonics
| | DOI: | 10.1038/nphoton.2015.199 | | Citations: | 277 (Dimensions.ai - last update: 21/4/2024)
133 (OpenCitations - last update: 19/4/2024)
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Abstract
Fully exploiting the silicon photonics platform for large volume, cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array monolithically grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined using standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits. Related Projects
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