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Thomas Swann - INTEC: MOVPE for InGaAsP/InPFull Name: Development of 3x2" MOVPE reactor for the uniform growth of InGaAsP/InP and InAlGaP/GaAs materials Duration: 1/1/95-... Objective: - To develop growth process and optimise uniformity for InGaAsP/InP- and InAlGaP/GaAs-materials
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Publications in the framework of this project (3)International Journals
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Z. Wang, B. Tian, M. Pantouvaki, Weiming Guo, Philippe Absil, J Van Campenhout, Clement Merckling, D. Van Thourhout,
Room Temperature InP Distributed Feedback Laser Array Directly Grown on (001) Silicon, Nature Photonics, doi:10.1038/nphoton.2015.199 (2015)
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International Conferences
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Z. Wang, M. Pantouvaki, G. Morthier, C. Merckling, J. Van Campenhout, D. Van Thourhout, G. Roelkens,
Heterogeneous Integration of InP Devices on Silicon, the 28th International Conference on Indium Phosphide and Related Materials (IPRM) (invited), Japan, p.paper ThD1-1 (2016) .
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Z. Wang, A. Malik, B. Tian, M. Muneeb, Clement Merckling, M. Pantouvaki, Yosuke Shimura, Roger Loo, J Van Campenhout, D. Van Thourhout, G. Roelkens,
Near/Mid-Infrared Heterogeneous Si Photonics, The 9th International Conference On Silicon Epitaxy And Heterostructures (invited), (2015) .
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