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Authors: M. Niels, T. Vanackere, E. Vissers, T. Zhai, P. Nenezic, J. Declerq, C. Bruynsteen, S. Niu, A. Moerman, O. Caytan, N. Singh, S. Lemey, X. Yin, S. Janssen, P. Verheyen, N. Singh, D. Bode, M. Davi, F. Ferraro, P. Absil, S. Balakrishnan, J. Van Campenhout, G. Roelkens, B. Kuyken, M. Billet
Title: High-speed lithium tantalate-based silicon photonic modulators
Format: International Conference Proceedings
Publication date: 7/2025
Journal/Conference/Book: Conference on Lasers and Electro-Optics/Europe (CLEO/Europe 2025) and European Quantum Electronics Conference (EQEC 2025)
Editor/Publisher: OPTICA, 
Location: Munchen, Germany
DOI: 10.1109/CLEO/Europe-EQEC65582.2025.11111408
Citations: Look up on Google Scholar
Download: Download this Publication (347KB) (347KB)

Abstract

Thin-film lithium niobate (TFLN) has emerged as a leading material for integrated photonics, offering a unique combination of low optical loss and a strong, fast electro-optic (EO) coefficient, enabling high-speed modulation bandwidths exceeding 100 GHz [1,2]. More recently, thin-film lithium tantalate (TFLT) has gained attention for its enhanced stability and resistance to optical damage [3,4]. However, lithium contamination poses a challenge for CMOS compatibility. Here we present a heterogeneously integrated LT-based silicon (Si) Mach-Zehnder modulator (MZM) with competitive characteristics, compared to devices using monolithic TFLT-on-insulator technology.

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