| Authors: | T. Vanackere, T. Vandekerckhove, L. Bogaert, M. Billet, S. Poelman, S. Cuyvers, L. Van Acker, J. Van Kerrebrouck, A. Moerman, O. Caytan, S. Lemey, G. Torfs, G. Roelkens, S. Clemmen, B. Kuyken | | Title: | Micro-Transfer Printed High-Speed Lithium Niobate Modulator on Silicon Nitride | | Format: | International Conference Presentation | | Publication date: | 11/2023 | | Journal/Conference/Book: | IEEE Photonics Benelux Annual Symposium 2023
| | Editor/Publisher: | IEEE, | | Location: | Gent, Belgium | | Online: | https://www.aanmelder.nl/ieee-ps-benelux-2023/wiki/860701/program | | Citations: | Look up on Google Scholar
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Abstract
Lithium niobate integrated modulators have shown great performance when it comes to fast, low loss modulation, with multiple >100 GHz demonstrations and insertion loss below a dB. This highly desired function is missing in the silicon nitride integrated photonic platform which could be interesting for application such as datacom, light detection and ranging (LIDAR), and quantum photonics and computing. Using micro-transfer printing we are able to heterogeneously integrate these thin film lithium niobate devices on top of silicon nitride integrated circuits to create high-speed electro-optic modulators. The demonstrator device is 2 mm long with a half-wave voltage Vπ of 14.8 V and an insertion loss of 3.3 dB. The device shows an extinction ratio of 39 dB and has a 3-dB Electro-Optic bandwidth of >50 GHz. We generated open eye diagram up to 70 Gb/s in this proof-of-principle demonstration paving the way towards more scalable heterogeneous integration of thin film lithium niobate on silicon and silicon nitride. Related Research Topics
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