Authors:	D. Colucci, U. Pfister, R. Alcotte, P. Swekis, M. De Maeyer, Z. Ouyang, T. Vandekerckhove, Y. Mols, R. Langer, M. Jetter, S. Luca Portalupi, P. Michler, G. Pourtois, D. Van Thourhout, B. Kunert
Title:	Single-photon source monolithically integrated on a 300 mm silicon wafer using III-V nano-ridge engineering
Format:	International Journal
Publication date:	6/2025
Journal/Conference/Book:	ACS Photonics
Volume(Issue):	12(7) p.3626-3634
DOI:	10.1021/acsphotonics.5c00526
Citations:	Look up on Google Scholar
Download:	(8MB)

Abstract

Single-photon sources (SPSs) are essential for developing practical quantum technologies, with their integration into silicon photonics seen as the preferred path for scalable implementations. To fully leverage mature CMOS foundry fabrication processes, we explored nano-ridge engineering (NRE) for the monolithic integration of InAs quantum dot (QD)-based SPSs on 300 mm silicon wafers. These nano-ridges, composed of high-crystal-quality GaAs selectively grown on trench-patterned wafers, form waveguides coplanar with the silicon chip, embedding InAs QDs to create SPSs. This work presents a new device concept and integration approach, demonstrating beta factors up to 0.87 due to the high refractive index contrast between GaAs and SiO2, followed by a proof of concept where selective QD deposition on diamond-shaped nano-ridges centers the dots within the final box-shaped nano-ridge overgrown after QD deposition, reducing overall QD density per ridge. The grown QDs exhibit excellent spectral properties, with linewidths as narrow as 32.7 μeV at 955 nm, and autocorrelation measurements confirm the single-photon nature of the structure, with g²(0) = 0.091 ± 0.005 under nonresonant pulsed excitation. These results establish a solid foundation for future developments, including implementing a PIN junction to improve indistinguishability and extending emission wavelengths to the telecommunication O-band by growing on InGaAs nano-ridges.

Related Research Topics

• IIIV microlasers epitaxially grown on silicon

Related Projects

• ERC-AdG: NARIOS (Nano-Ridge Engineering for Densely Integrated III-V Lasers Directly Grown on Silicon)