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Ir. Davide Colucci (Doctoral Researcher)
This person is working in this group since 2019.
DavideColucci was born in Brindisi, Italy, in 1994. He received in April 2017 theBachelor Degree in Physics from the University of Padova with the thesis "Studyof charge transport in Lithium Niobate by Monte Carlo simulation". He moved toBelgium in September 2017 to start the European Master of Science in Photonics,a joint degree between VUB and Ghent University. He received his Master Degreein September 2019 with the thesis "A Monolithic Integrated III-V PhotonicCrystal Laser on Silicon".
|Affiliation: ||Ghent University - IMEC |
Department of Information Technology
|Address: ||Technologiepark-Zwijnaarde 126|
|Office: ||iGent, Office 140.009|
|Phone: ||09 264 33 26|
|Promotors: ||Dries Van Thourhout
Specific Research Topics
D. Colucci, M. Baryshnikova, Y. Shi, Y. Mols, M. Muneeb, Y. De Koninck, D. Yudistira, M. Pantouvaki, J. Van Campenhout, R. Langer, D. Van Thourhout, B. Kunert,
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering, Optics Express, 30(8), p.13510-13521 doi:10.1364/OE.454795 (2022) .
Y. Shi, M. Pantouvaki, J. Van Campenhout, D. Colucci, M. Baryshnikova, B. Kunert, D. Van Thourhout,
Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer, Optics Express, 29(10), p.14649-14657 doi:10.1364/OE.422245 (2021) .
D. Colucci, Y. Shi, M. Baryshnikova, Y. Mols, M. Muneeb, Y. De Koninck, M. Pantouvaki, J. Van Campenhout, B. Kunert, D. Van Thourhout,
InGaAs nano-ridge laser emitting in the telecom O-band monolithically grown on a 300 mm Si wafer, 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO Europe-EQEC), p.paper CB-6.2 THU (2021) .
B. Kunert, D. Colucci, M. Baryshnikova, Y. Mols, R. Alcotte, D. Van Thourhout, C. Ozdemir, Y. De Koninck, M. Pantouvaki, J. Van Campenhout, A. Vais, S. Yadav, A. Sibaja-Hernandez, B. Parvais, N. Collaert, R. Langer,
III/V Nano-Ridge Engineering for Device Integration on 300 mm Silicon, Compound Semiconductor Week (invited), Sweden, (2021).
Click here for a printable publication list.
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