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Authors: D. Wang, T. N. L Tran, J. Carreira, C. Op de Beeck, S. Cuyvers, M. Geiselmann, S. Poelman, T. Reep, J. Zhang, G. Roelkens, B. Kuyken
Title: O-band GaAs Quantum Dot Optical Amplifier Integrated on an Advanced SiN Platform
Format: International Conference Proceedings
Publication date: 7/2025
Journal/Conference/Book: IEEE Opto-Electronics and Communications Conference (OECC) 2025
Editor/Publisher: IEEE, 
Location: Sapporo, Japan
DOI: 10.23919/OECC/PSC62146.2025.11110589
Citations: Look up on Google Scholar

Abstract

We present an O-band GaAs optical amplifier integrated on an advanced SiN platform using micro-transfer printing. A polycrystalline Si layer facilitates light coupling between GaAs and SiN, resulting 5 dB on-chip gain at 1300 nm.

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