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Authors: E. Soltanian, G. Muliuk, S. Uvin, D. Wang, G. Lepage, P. Verheyen, J. Van Campenhout, S. Ertl, J. Rimbock, N. Vaissiere, D. Neel, J. Ramirez, J. Decobert, B. Kuyken, J. Zhang, G. Roelkens
Title: Micro-Transfer-Printed Narrow-Linewidth III-V-on-Si Double Laser Structure with Combined 110 nm Tuning Range
Format: International Journal
Publication date: 10/2022
Journal/Conference/Book: Optics Express
Editor/Publisher: Optica Publishing Group, 
Volume(Issue): 30(22) p.39329-39339
DOI: 10.1364/OE.470497
Citations: Look up on Google Scholar

Abstract

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (uTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.

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