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Authors: M. Shahin, A. Abbasi, K. Ma, G. Roelkens, G. Morthier
Title: Towards High Modulation Bandwidth using Two-Section InP-on-Si DFB Laser Diodes
Format: International Conference Proceedings
Publication date: 11/2017
Journal/Conference/Book: 22nd Annual Symposium of the IEEE Photonics Benelux Chapter 2017
Volume(Issue): p.44-47
Location: Delft, Netherlands
Internal Reference: [N-2137]
Download: Download this Publication (265KB) (265KB)


A two-section InP-on-Si DFB laser diode with a high modulation bandwidth of 30 GHz is demonstrated. By modulating one section and controlling the DC-bias in both sections, a modulation speed of 40 Gbps for NRZ is achieved.

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