| Authors: | D. Wang, E. Soltanian, S. Qin, N. Vaissiere, D. Neel, J. Ramirez, J. Decobert, B. Kuyken, J. Zhang, G. Roelkens | | Title: | Heterogeneously integrated E-band InP-on-Si tunable laser via micro-transfer printing | | Format: | International Journal | | Publication date: | 8/2026 | | Journal/Conference/Book: | Optics Express
| | Editor/Publisher: | Optica Publishing Group, | | Volume(Issue): | 34(17) p.32584-32593 | | DOI: | 10.1364/OE.607214 | | Citations: | Look up on Google Scholar
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Abstract
We demonstrate a widely tunable E-band InP-on-Si laser heterogeneously integrated using micro-transfer printing. The InP-based quantum-well gain material is designed with a photoluminescence peak centered around 1400 nm. Pre-fabricated InP semiconductor optical amplifiers are micro-transfer printed onto the IMEC 200 mm silicon-on-insulator photonics platform. Using a silicon Vernier filter, continuous wavelength tuning from 1398 to 1439 nm is achieved, corresponding to a 41 nm tuning range spanning the upper E-band. The laser exhibits a side-mode suppression ratio exceeding 45 dB over the entire tuning range and delivers up to 3 mW output power in the silicon waveguide. A relative intensity noise level down to −145 dBc/Hz is measured, indicating low-noise operation relevant for optical communication applications. Related Research Topics
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