Authors:	M. Niels, E. Vissers, T. Vanackere, A. Moerman, X. Guo, P. Geerinck, E. Soltanian, J. Zhang, S. Janssen, P. Verheyen, N. Singh, D. Bode, M. Davi, F. Ferraro, P. Absil, S. Balakrishnan, J. Van Campenhout, S. Hänsch, H. Mai, N. Singh, G. Roelkens, S. Uvin, M. Billet, B. Kuyken
Title:	Demonstration of lithium niobate integration on a 200-mm silicon photonics wafer using transfer printing
Format:	International Journal
Publication date:	8/2025
Journal/Conference/Book:	Optics Letters
DOI:	https://doi.org/10.1364/OL.564405
Citations:	Look up on Google Scholar
Download:	(14.1MB)

Abstract

We present a scalable approach for the heterogeneous integration of lithium niobate onto silicon photonics platforms using wafer-scale micro-transfer printing. This approach enables the incorporation of efficient, high-speed modulators while maintaining compatibility with back-end processing. Electro-optic modulators with a length of 7 mm, fabricated with this technology, achieve a half-wave voltage of 4 V and a bandwidth exceeding 70 GHz. Furthermore, as proof of concept, we demonstrate the integration of more than 200 lithium niobate photonic structures directly on a 200-mm wafer and characterize their passive optical properties.

Related Research Topics

• photonic-electronic integrated circuits for optical transceivers
• Siliconnitride photonic integrated circuit platform
• Chi(2) nonlinear optics in silicon-based waveguide circuits
• Transfer printing technology

Related Projects

• Horizon Europe: PATTERN (Next generation ultra-high-speed microwave Photonic integrATed circuiTs using advancE hybRid iNtegration)