| Authors: | A. Shahin, M. Berciano, C.Coughlan, D. Yudistira, R. Loo, A. Kandeel, P. Verheyen, H. Kobbi, M. Chakrabarti, D. Van Thourhout, J. Van Campenhout | | Title: | Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode | | Format: | International Journal | | Publication date: | 10/2025 | | Journal/Conference/Book: | Journal of Lightwave Technologies
| | Editor/Publisher: | IEEE, | | Volume(Issue): | 43(19) p.9325 - 9332 | | DOI: | 10.1109/JLT.2025.3594842 | | Citations: | 1 (Dimensions.ai - last update: 21/12/2025)
Look up on Google Scholar
|
Abstract
We report on a waveguide-coupled (WG) vertical Germanium on Silicon (Ge-on-Si) Separate Absorption Charge Multiplication (SACM) Avalanche Photodiode (APD) achieving 3dB-bandwidths of 50 GHz and 30 GHz at an O-band responsivity of 3 A/W and 6 A/W respectively, combined with dark current levels below 50 nA. The experimental measurements are supported by a modeling approach showing how to optimize the SACM-APD charge layer to target high-speed performance. Related Research Topics
|
|
