| Authors: | Y. Li, S.J. Bleiker, E. Worsey, M. Dagon, P. Edinger, A.Y. Takabayashi, N. Quack, P. Verheyen, W. Bogaerts, K.B. Gylfason, D. Pamunuwa, F. Niklaus | | Title: | Volatile and Non-volatile Nanoelectromechanical Switches Fabricated in a CMOS-compatible Silicon-On-Insulator Foundry Process | | Format: | International Journal | | Publication date: | 7/2025 | | Journal/Conference/Book: | Microsystems & Nanoengineering
| | Volume(Issue): | 11 p.140 | | DOI: | 10.1038/s41378-025-00964-w | | Citations: | 1 (Dimensions.ai - last update: 18/1/2026)
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Abstract
Nanoelectromechanical (NEM) switches have the advantages of zero leakage current, abrupt switching characteristics, and harsh environmental capabilities. This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important. However, to make NEM-based logic circuits commercially viable, NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities, which remains a big challenge. Here, we demonstrate the use of a commercial silicon-on-insulator (SOI) foundry platform (iSiPP50G by IMEC, Belgium) to implement monolithically integrated silicon (Si) NEM switches. Using this SOI foundry platform featuring sub-200 nm lithography technology, we implemented two different types of NEM switches: (1) a volatile 3-terminal (3-T) NEM switch with a low actuation voltage of 5.6 V and (2) a bi-stable 7-terminal (7-T) NEM switch, featuring either volatile or non-volatile switching behavior, depending on the switch contact design. The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches, removing a significant barrier towards scalable manufacturing of high performance and high-density NEM-based programmable logic circuits and non-volatile memories. Related Research Topics
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