| Authors: | E.M.B. Fahmy, Z. Ouyang, D. Van Thourhout | | Title: | InGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a Si Wafer | | Format: | International Conference Presentation | | Publication date: | 4/2025 | | Journal/Conference/Book: | IEEE Siphotonics
| | Editor/Publisher: | IEEE, | | Volume(Issue): | p.paper WC6 (2 pages) | | Location: | London, United Kingdom | | Citations: | Look up on Google Scholar
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Abstract
We demonstrate a novel vertically emitting nano-ridge laser epitaxially grown on a 300-mm silicon wafer. By leveraging the concept of bound states in the continuum (BICs), we achieve confined optical modes with high Q-factors within the structure. We experimentally show low threshold lasing (10 kW/cm^2). Related Research Topics
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