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Ir. Eslam Fahmy (Doctoral Researcher)

Affiliation:	Ghent University-IMEC Department of Information Technology
Address:	Technologiepark-Zwijnaarde 126 9052 Gent Belgium
Office:	iGent, Office 150.011 (level 5)
E-mail:	eslam.fahmy@ugent.be
Twitter:	@eslammbakry Follow @eslammbakry
ORCID:	0000-0001-8713-8915
LinkedIn:	eslambakry
Promotor:	Dries Van Thourhout

Eslam received his bachelor's degree in Nanotechnology and Nanoelectronics Engineering from Zewail City of Science and Technology (Egypt) in 2018. In 2020, he received his master's degree in Photonics from both Ghent University and VUB. The thesis was a collaboration between IMEC (Leuven) and the photonics research group at Ghent University on "Silicon Photonics Wavelength Filters for Multiplexed Ultrasound Sensor Readout".

Specific Research Topics

IIIV microlasers epitaxially grown on silicon

Patents

E. Fahmy, D. Van Thourhout, D. Colucci, B. Kunert, Surface emitting laser

Publications (10)

International Journals

Z. Ouyang, E.M.B. Fahmy, D. Colucci, A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout, Ultra-compact InGaAs-GaAs nano-ridge laser monolithically grown on 300 mm silicon substrate, Optics Letters, 50(7), p. 2358-2361 (2025) .
Z. Ouyang, D. Colucci, E.M.B. Fahmy, A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout, InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300mm Si wafer , Optics Letters, (2024) .

International Conferences

E.M.B. Fahmy, T. Coenen, Z. Ouyang, D. Van Thourhout, A Novel Surface-Emitting Laser Using Coupled InGaAs/GaAs Nano-Ridges on Si: Insights from Cathodoluminescence, accepted for publication in Conference on Lasers and Electro-Optics Europe, Germany, (to be published).
E.M.B. Fahmy, Z. Ouyang, D. Van Thourhout, InGaAs/GaAs Nano-Ridge Laser Based on Bound States in the Continuum Epitaxially Grown on a Si Wafer, IEEE Siphotonics, United Kingdom, p.paper WC6 (2 pages) (2025).
E.M.B. Fahmy, Z. Ouyang, D. Van Thourhout, Slow-Light Lasing in 1D Photonic crystal InGaAs/GaAs Nano-Ridges Epitaxially Grown on a Si Wafer , Photonics West, 13371, United States, p.paper 133710V (5 pages) doi:10.1117/12.3043386 (2025).
Z. Ouyang, D. Colucci, E.M.B. Fahmy, A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout, Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nano-ridge laser monolithically grown on 300 mm silicon substrate, SPIE Europe 2024, France, p.130120D (2024) .
Z. Ouyang, E. Fahmy, D. Colucci, A. Yimam, B. Kunert, D. Van Thourhout, Side-amorphous-silicon-grating InGaAs/GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate, Asia Communications and Photonics Conference 2023, China, p.paper ACPPOEM 0731-152 (3 pages) (2023) .
Z. Ouyang, E. Fahmy, A. Yimam, B.Kunert, D. Van Thourhout, Low-optical-pumping-threshold InGaAs/GaAs Nano-ridge Laser Monolithically Grown on 300 mm Silicon Substrate, Conference on Lasers and Electro-Optics, United States, p.paper STh3H.3 (2 pages) (2023) .
Z. Ouyang, E. Fahmy, D. Colucci, A. Yimam, B. Kunert, D. Van Thourhout, Top-amourous-silicon-grating InGaAs+GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate, IEEE Photonic Benelux Annual Symposium, Netherlands, (2022) .
E. Fahmy, Z. Ouyang, D. Van Thourhout, Amorphous Silicon side-wall grating DFB InGaAs/GaAs nano-ridge laser epitaxially grown on a Si wafer, IEEE Benelux Photonics Chapter - Annual Symposium 2022, Netherlands, p.poster 19 (2022) .

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