Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services
 IMEC
intern

 

Publication detail

Authors: Y. Liu, J. Zhang, L. Bogaert, E. Soltanian, E.Delli, Konstantin Morozov, Sergey Mikhrin, Johanna Rimb¨ock, Peter Ossieur, Guy Lepage, Peter Verheyen, Joris Van Campenhout, G. Morthier, G. Roelkens
Title: Micro-transfer printing of O-band InAs/GaAs quantum-dot SOAs on silicon photonic integrated circuits (Editor
Format: International Journal
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: Photonics Research
DOI: 10.1364/PRJ.545946
Citations: Look up on Google Scholar
Download: Download this Publication (4.3MB) (4.3MB)

Abstract

Silicon photonics (SiPh) technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing. However, integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon's indirect bandgap. In this study, we developed prefabricated standardized GaAs quantum-dot (QD) active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits. By transfer-printing standardized GaAs QD devices onto specific regions of the SiPh chip, we realized O-band semiconductor optical amplifiers (SOAs), distributed feedback (DFB) lasers, and widely tunable lasers (TLs). The SOAs reached a on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range. The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW, with a side-mode suppression ratio (SMSR) of 33.3 dB, and demonstrated notable robustness against high optical feedback, supporting error-free data rates of 30 Gbps without additional isolators. Meanwhile, the TLs demonstrated a wavelength tuning range exceeding 35 nm, and a WG-coupled output power greater than 3 mW. The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process, allowing back-end integration of the III-V devices. Our approach offers a viable path toward fully integrated III-V/SiPh platforms capable of supporting high-speed, high-capacity communication.

Related Research Topics


Back to publication list