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Authors: A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G.-H. Duan, G. Roelkens, G. Morthier
Title: Direct and electro-absorption modulation of a III-V-on-silicon DFB laser at 56 Gbps
Format: International Journal
Publication date: 11/2017
Journal/Conference/Book: IEEE Journal of Selected Topics in Quantum Electronics
Editor/Publisher: IEEE, 
Volume(Issue): p.1501307 (7 pages)
DOI: 10.1109/JSTQE.2017.2708606
Citations: 25 ( - last update: 21/7/2024)
21 (OpenCitations - last update: 27/6/2024)
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In order to cope with the ever-growing internet traffic, high-speed optical interconnects are becoming indispensable. Silicon photonics is emerging as a key technology for such interconnects. In this paper, we demonstrate 56 Gbps Non-Return to Zero On-Off Keying (NRZ-OOK) direct modulation based on a high bandwidth heterogeneously integrated III-V-on-silicon distributed feedback laser, as well as transmission over 2 km single mode fiber. Using a very similar device, but with electrically isolated and reversely biased tapers, we obtain compact electro-absorption modulation at 56 Gbps NRZ-OOK as well.

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