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Authors: J. Verbist, H. Chen, B. Moeneclaey, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Roelkens
Title: A 1310 nm sub-5V Ge APD based optical receiver in a silicon platform for 32 Gbps PAM-4 transmission over 40 km
Format: International Conference Proceedings
Publication date: 11/2016
Journal/Conference/Book: Proceedings Symposium IEEE Photonics Society Benelux
Volume(Issue): p.91-94
Location: Ghent, Belgium
Internal Reference: [N-1961]
Download: Download this Publication (2.8MB) (2.8MB)

Abstract

Avalanche photodetectors (APDs) integrated in a silicon photonics platform can
significantly improve the link budget of optical interconnects by boosting the optical
receiver sensitivity compared to conventional p-i-n photodetectors at CMOS-friendly
bias voltages. We demonstrate a silicon-based receiver consisting of a low-voltage
(<5V) 1310 nm Ge APD and a low-power BiCMOS transimpedance amplifier. The
receiver offers a sensitivity improvement of ~6dB for 32 Gbps PAM-4 transmission over
>40 km with a commercially available direct-modulated DFB laser as transmitter,
allowing a 4 times higher split ratio in FTTx passive optical networks for the same link
budget.

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