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Authors: A. Dhakal, P.C. Wuytens, F. Peyskens, A. Subramanian, N. Le Thomas, R. Baets
Title: Silicon-nitride waveguides for on-chip Raman spectroscopy
Format: International Conference Proceedings
Publication date: 6/2014
Journal/Conference/Book: SPIE Photonics Europe 14
Editor/Publisher: spie, 
Location: Brussels,
Internal Reference: [N-1576]
Download: Download this Publication (567KB) (567KB)

Abstract

The evanescent tail of the guided modes can efficiently excite Raman active molecules located in the cladding of a waveguide. Similarly, a significant fraction of the total emitted Stokes power is evanescently coupled to the same mode. Further, the enhancement effects inherent to the waveguide, alongside with the long interaction length, lead to an increased light-matter interaction, resulting in a higher sensitivity as required by spectroscopic applications, especially in
the context of Raman spectroscopy. We calculate the spontaneous Raman scattering efficiency as a function of siliconnitride strip waveguide dimensions and show that under typical conditions, the overall efficiency is approximately two orders of magnitude higher than in confocal configuration in the free space. We also report the experimental
demonstration of the use of silicon-nitride based photonic waveguides in a lab-on-a-chip context for Ramanspectroscopy. To the best of our knowledge, this is the first demonstration of Raman spectroscopy using photonic waveguides.


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