| Authors: | S. Selvaraja, Luis Fernandez, M. Vanslembrouck, Jean-Luc Everaert, P. Dumon, J. Van Campenhout, W. Bogaerts, Philippe Absil | | Title: | Si photonic device uniformity improvement using wafer-scale location specific processing | | Format: | International Conference Proceedings | | Publication date: | 9/2012 | | Journal/Conference/Book: | IEEE Photonics Conference 2012 (IPC)
| | Volume(Issue): | p.725-726 | | Location: | Burlingame, California, United States | | DOI: | 10.1109/ipcon.2012.6358827 | | Citations: | 9 (Dimensions.ai - last update: 14/4/2024)
3 (OpenCitations - last update: 10/5/2024)
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Abstract
We report two-fold improvement in Si photonic device uniformity over a 200mm SOI wafer through location specific processing. A within wafer thickness non-uniformity of 0.8nm yielding a grating fiber-coupler peak-wavelength nonuniformity of 1.8nm is achieved. Related Research Topics
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