| Authors: | H. Yu, W. Bogaerts, K. Komorowska, R. Baets, Korn dietmar, Alloatti Luca, Hillerkuss David, Koos Christian, Freude Wolfgang, Leuthold Juerg, Van Campenhout Joris, Verheyen Peter, Wouters Johan, Moelants Myriam, Absil Philippe | | Title: | Doping Geometries for 40G Carrier-Depletion-Based Silicon Optical Modulators | | Format: | International Conference Proceedings | | Publication date: | 3/2012 | | Journal/Conference/Book: | The Optical Fiber Communication Conference and Exposition (OFC) and The National Fiber Optic Engineers Conference (NFOEC) 2012
| | Volume(Issue): | p. OW4F.4 | | Location: | Los Angeles , United States | | DOI: | 10.1364/ofc.2012.ow4f.4 | | Citations: | 7 (Dimensions.ai - last update: 14/4/2024)
5 (OpenCitations - last update: 3/5/2024)
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Abstract
A comparison is preformed between carrier-depletion modulators with different doping
patterns to reach low VðLð = 0.62 V∙cm at DC with interdigitated and lateral PN junctions
respectively, but also show modulation at 35 Gbit/s (errorfree). Related Research Topics
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