|Authors: ||W. Bogaerts, R. Baets, G. Roelkens, D. Van Thourhout, p. Absil, S. Selvaraja, H. Yu, A. Masood|
|Title: ||A silicon photonics platform with heterogeneous III-V integration|
|Format: ||International Conference Presentation|
|Publication date: ||8/2010|
|Journal/Conference/Book: ||Workshop on the Future of Silicon Photonics
|Volume(Issue): || p.11|
|Location: ||Beijing, China|
|Internal Reference: ||[N-1032]|
We will present an overview of the work by Ghent University and imec on a multipurpose photonic platform based on silicon technology with heterogeneous integration of III-V materials. Silicon photonics is widely considered to be the most promising technology to realize a high-performance, low-cost and high-volume photonic platform that can enable complex VLSI photonic functionality. One of the key enablers for silicon photonics is the possibility leverage existing silicon processing technology. Silicon as a material is exceptionally suited for compact passive waveguide circuits, but for light detection, and especially generation, III-V materials are by far superior. Heterogeneous integration of III-V materials on silicon photonic circuits has already been demonstrated in working lasers and efficient photodetectors. We will discuss the recent progress in adhesive III-V-on-silicon bonding technology, with working lasers, microlasers and different types of photodetectors, and how these devices can be used for different purposes.
III-V integration can only be successful if integrated in a fully functional silicon photonics platform. III-V materials are typically not used in a silicon process environment. To accommodate the III-V materials inside a silicon process flow, careful considerations have to be made for contamination and temperature budget. Imec is constructing a full silicon photonics platform which not only integrates passive silicon photonics, but also modulators, germanium photodetectors, thermal tuning, III-V integration and 3-D integration with electronics.
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