Authors:	S. Selvaraja, P. Jaenen, S. Beckx, W. Bogaerts, P. Dumon, D. Van Thourhout, R. Baets
Title:	Silicon nanophotonic wire structures fabricated by 193nm optical lithography
Format:	International Conference Presentation
Publication date:	10/2007
Journal/Conference/Book:	LEOS Annual Meeting 2007 (invited)
Location:	Florida, United States
DOI:	10.1109/leos.2007.4382268
Citations:	7 (Dimensions.ai - last update: 14/4/2024) 1 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8dB/cm for 450X220nm photonic wire.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)
• Low-loss Nanophotonic waveguides (1999-2010)

Related Projects

• IST: ePIXnet (European Network of Excellence on Photonic Integrated Components and Circuits)