Authors: | J. Brouckaert, G. Roelkens, D. Van Thourhout, R. Baets | Title: | Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs | Format: | International Journal | Publication date: | 4/2007 | Journal/Conference/Book: | Journal of Lightwave Technology
| Editor/Publisher: | IEEE/OSA, | Volume(Issue): | 25(4) p.1053-1060 | DOI: | 10.1109/jlt.2007.891172 | Citations: | 62 (Dimensions.ai - last update: 29/9/2024) 36 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract
We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III–V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on-glass are studied and compared as bonding agents. After the removal of the III–V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal–semiconductor–metal detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors. Related Research Topics
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