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Authors: J. Brouckaert, G. Roelkens, D. Van Thourhout, R. Baets
Title: Thin film InGaAs MSM photodetectors integrated onto silicon-on-insulator waveguide circuits
Format: International Conference Proceedings
Publication date: 11/2006
Journal/Conference/Book: LEOS Benelux Annual Symposium
Location: Eindhoven, Netherlands
Internal Reference: [N-554]
Download: Download this Publication (1.2MB) (1.2MB)

Abstract

Silicon-on-insulator (SOI) is rapidly emerging as a versatile platform for a variety of
integrated nanophotonic components. High density waveguide circuits can be
fabricated using standard CMOS processing techniques. However, light detection in the
near-infrared wavelength range (1550 nm) is not possible in silicon which is naturally
transparent in this region. One possibility for overcoming this is the integration of III-V
semiconductors. We present simulation results of a very compact thin film InGaAs
metal-semiconductor-metal (MSM) detector integrated on an SOI waveguide. These
photodetectors can be fabricated on a wafer scale and efficiencies of +90% are
predicted for wavelengths up to 1650 nm.

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