| Authors: | P. Demeester, A. Ackaert, I. Moerman, R. Baets, P. Lagasse | | Title: | Metalorganic vapor phase heteroepitaxial growth of (Al)GaAs on InP for device applications | | Format: | International Journal | | Publication date: | 8/1988 | | Journal/Conference/Book: | Journal of Crystal Growth
| | Volume(Issue): | 93 p.940-941 | | Location: | Amsterdam, | | Internal Reference: | [O-357] | | DOI: | 10.1016/0022-0248(88)90651-3 | | Citations: | 1 (Dimensions.ai - last update: 11/1/2026)
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