| Authors: | F. Clauwaert, P. Van Daele, R. Baets, P. Lagasse | | Title: | characterization of device isolation in GaAs MESFET circuits by boron implantation | | Format: | International Journal | | Publication date: | 3/1986 | | Journal/Conference/Book: | Journal of the Electrochemical Society
| | Volume(Issue): | 134(3) p.711-714 | | Internal Reference: | [O-277] | | DOI: | 10.1149/1.2100537 | | Citations: | 11 (Dimensions.ai - last update: 28/12/2025)
9 (OpenCitations - last update: 26/4/2025)
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