| Authors: | A. Elshazly, M. C. Oktay, H. Kobbi, M. Khoder, R. Magdziak, R. Mac Clarmain, M. Chakrabarti, H. Sar, A. Hadi Shahar, F. Ferraro, P. Absil, P. Ossieur, I. Jadil, J. Van Campenhout, W. Bogaerts, Q. Deng | | Title: | Ultra-low-loss silicon photonic polarization beam splitter in C-band | | Format: | International Journal | | Publication date: | 9/2026 | | Journal/Conference/Book: | IEEE Photonics Technology Letters
| | DOI: | 10.1109/LPT.2026.3739235 | | Citations: | Look up on Google Scholar
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Abstract
We demonstrate an ultra-low-loss C-band polarization beam splitter (PBS) based on an asymmetric bent directional coupler on a silicon-on-insulator (SOI) platform, employing third-order polynomial interconnected circular (TOPIC) bends to minimize bend losses. The PBS insertion loss (IL) is accurately extracted by cascading up to 40 identical devices and applying linear regression. At 1550 nm wavelength, the fabricated PBS achieves an IL of 0.015±0.005 dB and 0.043±0.008 dB for TM and TE input, respectively. Over the 1500–1600 nm wavelength range, the IL remains below 0.461+-0.014 dB for TM and 0.058+-0.003 dB for TE, with a 20 dB extinction ratio bandwidth of 30 nm for both polarizations. Wafer-level characterization across 26 dies confirms the design robustness and fabrication tolerance. Related Research Topics
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