| Authors: | Y. Liu, J. Zhang, E.Delli, G. Roelkens | | Title: | Evanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated Lasers | | Format: | International Conference Presentation | | Publication date: | 6/2026 | | Journal/Conference/Book: | Photonics West
| | Editor/Publisher: | Photonics West, | | Location: | San Francisco, CA, United States | | DOI: | 10.1117/12.3078863 | | Citations: | Look up on Google Scholar
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Abstract
Void-induced evanescent coupling degradation in InP-on-Si lasers is analyzed. A location-dependent analysis reveals 100 nm particles at the tapers cause a 0.913 dB loss (vs. 0.058 dB at mid-coupon). Guidelines for void-tolerant evanescent interfaces on the SiPh platform are proposed. Related Research Topics
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