|Authors: ||D. Maes, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken|
|Title: ||Micro-Transfer-Printed Photodiodes on Silicon Nitride for High-Speed Communications|
|Format: ||International Conference Poster|
|Publication date: ||11/2022|
|Journal/Conference/Book: ||IEEE Benelux Photonics Chapter - Annual Symposium 2022
|Volume(Issue): || p.poster 38|
|Location: ||Eindhoven, Netherlands|
|Citations: ||Look up on Google Scholar
Silicon photonics is a key technology for high-speed interconnects. Its small footprint, integrated nature, and CMOS-compatible manufacturing make it a technological platform that is rapidly being embraced by industry. Silicon Nitride (SiN) flavored platforms have some extra benefits, including low-loss waveguides, allowing high-Q filters, and no two-photon absorption (TPA), greatly improving its power handling. However, the functionality of this passive platform needs to be extended to feature active components, and as such relies on heterogenous integration techniques for detectors and light sources.
To this end, we have transfer-printed uni-travelling-carrier photodiodes (UTC PDs) on a SiN photonic integrated circuit (PIC). These evanescently coupled photodiodes have a waveguide-referenced responsivity of 0.3 A/W, a dark current of 10 nA at -1 V bias and a 3-dB bandwidth of 155 GHz and 135 GHz at -1 V and zero bias, respectively.
In this paper, we show that such a high-bandwidth heterogeneously integrated photodetector can be used for direct photomixing at sub-mmWave (sub-THz) frequencies, enabling data rates beyond 100 Gbit/s.
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