Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services
 IMEC
intern

 

Publication detail

Authors: D. Maes, L.N Reis, S. Poelman, E. Vissers, V. Avramovic, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken
Title: High-Speed Photodiodes on Silicon Nitride with a Bandwidth beyond 100 GHz
Format: International Conference Proceedings
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: Conference on Lasers and Electro-Optics (CLEO)
Location: San Jose, United States
DOI: 10.1364/CLEO_SI.2022.SM3K.3
Citations: Look up on Google Scholar
Download: Download this Publication (10MB) (10MB)

Abstract

Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0.45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.


Back to publication list