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Authors: M. Billet, L.N Reis, Y. Leger, C. Cornet, F. Raineri, I. Sagnes, K. Pantzas, G. Beaudoin, G. Roelkens, F. Leo, B. Kuyken
Title: Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printing
Format: International Journal
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: Optical Materials Express
Editor/Publisher: Optica publishing group, 
Citations: Look up on Google Scholar

Abstract

Gallium phosphide-on-insulator emerged recently as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. However, current integration solutions, using direct die-to-wafer bonding, do not support spatially localized integration with CMOS circuits which induce a large and expensive footprint material need. Here we demonstrate the transfer of gallium phosphide layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hybrid) integration. Using this novel approach, we demonstrate as a proof of concept the fabrication of gallium phosphide-on-insulator ring resonators with Q-factors as high as 35 000.

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