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Authors: C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, B. Kuyken
Title: Heterogeneously Integrated Laser on a Silicon Nitride Platform via Micro-Transfer Printing
Format: International Conference Proceedings
Publication date: 9/2019
Journal/Conference/Book: Frontiers in Optics
Volume(Issue): p.paper FTu6B.1
Location: Washington, United States
DOI: 10.1364/FIO.2019.FTu6B.1
Citations: 4 ( - last update: 21/7/2024)
3 (OpenCitations - last update: 27/6/2024)
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We demonstrate the first heterogeneously integrated laser around 1550 nm on a silicon-nitride-on-insulator chip. Single-mode lasing at room temperature is achieved in a silicon nitride cavity comprising an adiabatically tapered III-V amplifier.

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