|Authors: ||A. Raza, S. Clemmen, M. Van Daele, J. Dendooven, M.B. E. Griffiths, S.T. Barry, A. Skirtach, C. Detavernier, R. Baets|
|Title: ||On-chip surface enhanced Raman spectroscopy using ALD grown plasmonic nanotrenches integrated with a silicon nitride slot waveguide|
|Format: ||International Conference Proceedings|
|Publication date: ||4/2019|
|Journal/Conference/Book: ||European Conference on Integrated Optics (ECIO 2019)
|Volume(Issue): ||21 p.paper T.B1.3|
|Location: ||Gent, Belgium|
|Citations: ||Look up on Google Scholar
We present an enhanced Raman spectroscopy using sub 10 nm plasmonic nanotrenches directly grown on a
silicon nitride slot waveguide using atomic layer deposition (ALD). A novel ALD process for gold deposition at
100 C is used, the precursor and reactant used for this process are Me3AuPMe3 and H2 plasma, respectively.
The fabricated Raman sensor exhibits 1.5 108 pump to Stokes conversion efficiency for a monolayer
of 4-Nitrophenol. This is at least an order of magnitude higher than the state of art nanoplasmonic waveguide
based Raman sensors.