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Authors: K. Alexander, J. George, J. Verbist, K. Neyts, B. Kuyken, D. Van Thourhout, J. Beeckman
Title: Nanophotonic Pockels modulators on a silicon nitride platform
Format: International Journal
Publication date: 8/2018
Journal/Conference/Book: Nature Communications
Volume(Issue): 9(1) p.3444
DOI: 10.1038/s41467-018-05846-6
Citations: 186 ( - last update: 21/7/2024)
141 (OpenCitations - last update: 27/6/2024)
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Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate?(PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses. A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

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