| Authors: | M. Hsu, C. Merckling, S. El Kazzi, M. Pantouvaki, O. Richard, H. Bender, J. Meersschaut, J. Van Campenhout, P. Absil, D. Van Thourhout | | Title: | Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001) | | Format: | International Journal | | Publication date: | 12/2016 | | Journal/Conference/Book: | Journal of Applied Physics
| | Volume(Issue): | 120 p.225114 | | DOI: | 10.1063/1.4972101 | | Citations: | 4 (Dimensions.ai - last update: 21/12/2025)
4 (OpenCitations - last update: 27/6/2025)
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