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Authors: C. Merckling, Z. Liu, M. Hsu, S. Hasan, S. Jiang, S. El-Kazzi, G. Boccardi, N. Waldron, Z. Wang, B. Tian, M. Pantouvaki, J. Van Campenhout, N. Collaert, M. Heyns, D. Van Thourhout, W. Vandervorst, A. Thean
Title: III-V selective area growth and epitaxial functional oxides on Si: from Electronic to Photonic devices
Format: International Journal
Publication date: 5/2016
Journal/Conference/Book: ECS Transactions
Editor/Publisher: ECS, 
Volume(Issue): 72(2) p.59-69
DOI: 10.1149/07202.0059ecst
Citations: Look up on Google Scholar
Download: Download this Publication (592KB) (592KB)


This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.

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