Authors:	C. Merckling, Z. Liu, M. Hsu, S. Hasan, S. Jiang, S. El-Kazzi, G. Boccardi, N. Waldron, Z. Wang, B. Tian, M. Pantouvaki, J. Van Campenhout, N. Collaert, M. Heyns, D. Van Thourhout, W. Vandervorst, A. Thean
Title:	III-V selective area growth and epitaxial functional oxides on Si: from Electronic to Photonic devices
Format:	International Journal
Publication date:	5/2016
Journal/Conference/Book:	ECS Transactions
Editor/Publisher:	ECS,
Volume(Issue):	72(2) p.59-69
DOI:	10.1149/07202.0059ecst
Citations:	Look up on Google Scholar
Download:	(592KB)

Abstract

This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.