| Authors: | Y. Shi, B. Kunert, M. Baryshnikova, M. Pantouvaki, J. Van Campenhout, D. Van Thourhout | | Title: | Optical gain characterization of nano-ridge epitaxially grown on a standard Si wafer | | Format: | International Conference Proceedings | | Publication date: | 5/2018 | | Journal/Conference/Book: | Conference on Lasers and Electro-Optics
| | Volume(Issue): | p.paper JTu2A.21 (2 pages) | | Location: | San Jose, United States | | DOI: | 10.1364/cleo_at.2018.jtu2a.21 | | Citations: | 2 (Dimensions.ai - last update: 21/12/2025)
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Abstract
With this paper, the authors report optical gain characterization of InGaAs/GaAs nano-ridge amplifierss epitaxially grown on a standard 300-mnm Si wafer, by varying strip length (VSL) method. The measured material gain is 4000cm-1, which is comparable with
conventional GaAs material. Related Research Topics
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