Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services


Publication detail

Authors: Y. Shi, B. Kunert, M. Baryshnikova, M. Pantouvaki, J. Van Campenhout, D. Van Thourhout
Title: Optical gain characterization of nano-ridge epitaxially grown on a standard Si wafer
Format: International Conference Proceedings
Publication date: 5/2018
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Volume(Issue): p.paper JTu2A.21 (2 pages)
Location: San Jose, United States
DOI: 10.1364/cleo_at.2018.jtu2a.21
Citations: 2 ( - last update: 19/5/2024)
Look up on Google Scholar
Download: Download this Publication (630KB) (630KB)


With this paper, the authors report optical gain characterization of InGaAs/GaAs nano-ridge amplifierss epitaxially grown on a standard 300-mnm Si wafer, by varying strip length (VSL) method. The measured material gain is  4000cm-1, which is comparable with
conventional GaAs material.

Related Research Topics

Back to publication list