| Authors: | M. Shahin, K. Ma, A. Abbasi, G. Roelkens, G. Morthier | | Title: | 45 Gbps Direct Modulation of Two-Section InP-on-Si DFB Laser Diodes | | Format: | International Journal | | Publication date: | 4/2018 | | Journal/Conference/Book: | IEEE Photonics Technology Letters
| | Editor/Publisher: | IEEE, | | Volume(Issue): | 30(8) p.685-687 | | DOI: | 10.1109/LPT.2018.2811906 | | Citations: | 8 (Dimensions.ai - last update: 21/12/2025)
8 (OpenCitations - last update: 27/6/2025)
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Abstract
Two-section heterogeneously integrated InP-on-Si DFB laser diodes are demonstrated. In the modulation response, the relaxation oscillation frequency of 10 GHz is followed by a second resonance to achieve nearly 25 GHz 3-dB modulation bandwidth and 45 Gbps NRZ-OOK transmission. Related Research Topics
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