| Authors: | M. Shahin, A. Abbasi, K. Ma, G. Roelkens, G. Morthier | | Title: | Towards High Modulation Bandwidth using Two-Section InP-on-Si DFB Laser Diodes | | Format: | International Conference Proceedings | | Publication date: | 11/2017 | | Journal/Conference/Book: | Annual Symposium of the IEEE Photonics Society Benelux Chapter
| | Volume(Issue): | p.44-47 | | Location: | Delft, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
A two-section InP-on-Si DFB laser diode with a high modulation bandwidth of 30 GHz is demonstrated. By modulating one section and controlling the DC-bias in both sections, a modulation speed of 40 Gbps for NRZ is achieved. Related Research Topics
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