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Authors: A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout
Title: Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser applications
Format: International Conference Proceedings
Publication date: 10/2017
Journal/Conference/Book: 30th Annual Conference of the IEEE Photonics Society (IPC)
Volume(Issue): p.311-312
Location: Lake Buena Vista, Florida, United States
DOI: 10.1109/ipcon.2017.8116120
Citations: 1 ( - last update: 16/6/2024)
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The homogeneous broadening in Phosphorus doped
Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter ΓHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.

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