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Authors: A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout
Title: Reduction of Optical Bleaching in Phosphorus doped Ge layers on Si
Format: International Conference Proceedings
Publication date: 12/2016
Journal/Conference/Book: 14th International Conference on Group IV Photonics
Volume(Issue): p.53-54
Location: Berlin, Germany
DOI: 10.1109/group4.2017.8082192
Citations: Look up on Google Scholar


Optical bleaching is studied on undoped and highly doped Ge layer on Si using Transient Absorption Spectroscopy.
Upon optical pumping, doped Ge showed a reduction in optical bleaching as compared to undoped Ge due to the homogeneous broadening effect in doped Ge.

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