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Authors: Y. Shi, Z. Wang, J. Van Campenhout, M. Pantouvaki, B. Kunert, D. Van Thourhout
Title: Monolithic InGaAs/GaAs multi-QWs DFB nanoridge laser directly grown on 300 mm Si Wafer
Format: International Conference Proceedings
Publication date: 7/2017
Journal/Conference/Book: Advanced Photonics Congress, OSA
Volume(Issue): p.paper ITu2A.2 (3 pages)
Location: New Orleans, Louisiana, United States
DOI: 10.1364/iprsn.2017.itu2a.2
Citations: 1 ( - last update: 19/5/2024)
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Ultra-large-volume and low-cost-per-chip CMOS photonics integrated circuit has been searching for high-performance, Si-compatible laser sources that can be directly integrated on Si wafer for mass production. III-V semiconductor, the considered efficient
light generation material, unfortunately has big lattice mismatch and thermal expansion contrast with Si, extremely difficult to be epitaxially grown on Si. Here we demonstrate an optically pumped monolithic InGaAs/GaAs multi-QWs single-mode DFB nano-ridge laser
which is directly grown from 300mm Si wafer by using aspect ratio defect trapping technique.

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