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Authors: Y. Hu, M. Pantouvaki, J. Van Campenhout, S. Brems, I. Asselberghs, C. Huyghebaert, P. Absil, D. Van Thourhout
Title: Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon
Format: International Journal
Publication date: 1/2016
Journal/Conference/Book: Laser & Photonics Reviews
Editor/Publisher: Elsevier, 
Volume(Issue): 10(2) p.307-316
DOI: 10.1002/lpor.201500250
Citations: 150 ( - last update: 14/7/2024)
132 (OpenCitations - last update: 27/6/2024)
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High performance integrated optical modulators are highly desired for future optical interconnects. The ultra-high bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.

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