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Authors: A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout
Title: Extraction of Carrier Lifetime using Pump Probe Spectroscopy on Integrated Ge Waveguides
Format: International Journal
Publication date: 6/2016
Journal/Conference/Book: Applied Physics Letters
Volume(Issue): 108 p.211101
DOI: 10.1063/1.4952432
Citations: 16 ( - last update: 14/7/2024)
13 (OpenCitations - last update: 27/6/2024)
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Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission
pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides
with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers
strongly depend on the thickness and width of the waveguide due to defect assisted surface
recombination. Interface recombination velocities of 0.975x10^4 cm/s and 1.45x10^4 cm/s were
extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively.

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