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Authors: Y. Shimura, A. Srinivasan, D. Van Thourhout, R. V. Deun, M. Pantouvaki, J. Van Campenhout, R. Loo
Title: High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects
Format: International Conference Presentation
Publication date: 1/2016
Journal/Conference/Book: 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited)
Location: Sendai, Japan
Citations: Look up on Google Scholar

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