Authors: | A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout | Title: | 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator | Format: | International Conference Proceedings | Publication date: | 3/2016 | Journal/Conference/Book: | Optical Fiber Communication Conference 2016
| Volume(Issue): | p.Tu3D.7 | Location: | United States | DOI: | 10.1364/ofc.2016.tu3d.7 | Citations: | 20 (Dimensions.ai - last update: 8/12/2024) 12 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB with 4.4±0.6dB insertion loss and the dynamic extinction ratio is 3.0dB at 50Gb/s NRZ-OOK with a 2V swing. Related Research Topics
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Citations (OpenCitations)
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