Authors: | A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout | Title: | Carrier Lifetime Assessment in Integrated Ge Waveguide Devices | Format: | International Conference Proceedings | Publication date: | 8/2015 | Journal/Conference/Book: | 12th International Conference on Group IV Photonics (GFP)
| Volume(Issue): | p.ThC2 | Location: | Vancouver, Canada | DOI: | 10.1109/group4.2015.7305916 | Citations: | 1 (Dimensions.ai - last update: 8/12/2024) 1 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 um wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2e19 cm-3. Related Research Topics
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